Real part of the dielectric function of Si as a function of photon energy compared to the plasma frequency . If the plasma frequency is located on the left of the resonance peak, surface mode is not bounded to the surface and SPP are not allowed. If the plasma frequency is located on the right of the surface plasmon polariton resonance peak, the SPPs are allowed.
(a) Minimum of the real part of the dielectric function as a function of laser fluence. Blue line indicates the threshold for SPP excitation, e.g., . (b) Maximum of the reached density during the interaction as a function of laser fluence. Blue line indicates critical density, e.g., . . Several laser pulse durations are represented.
Fluence threshold for SPP resonance as a function of pulse duration.
Distribution of the dielectric function as a function of depth and time. .
Transmitted field amplitude below the selvedge region of Si. Roughness amplitude is (a) , (b) , (c) at wavelength 800 nm. In these simulations, .
Wavelength normalized period of SPP as a function of free-carrier density at vacuum-Si interface when the conditions of resonance are met.
Experimental measurements of the LSFL periods, as a function of laser fluence. . The periods resulting from theoretical investigations are also represented. 4,68
Ripple periodicity as a function of angle of incidence and laser polarization after 10 laser pulses. Pulse duration is 100 fs, and laser wavelength is 800 nm.
The calculation parameters for c-Si under 800 nm irradiation.
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