Growth rate of as-deposited films and absorption coefficient (λ = 550 nm) of annealed films vs PEM setpoint values S. S = 1 corresponds to pure Ar atmosphere; decreasing S corresponds to increasing O2 flow/partial pressure. Achieving stable deposition for S = 0.93–1 is impossible because of technical limitations of the PEM system.
Grazing incidence XRD patterns of the annealed films. The as-deposited films were grown at a total pressure of 2 (a) and 1 Pa (b). S indicates PEM set point used for deposition. The inset shows the TEM diffraction pattern of the as-deposited film grown at a total pressure of 2 (a) and 1 Pa (b).
Free electron density ne (a), mobility μH (b), and film resistivity ρ(c) vs PEM setpoint.
Temperature-dependent Hall effect measurements of films with 3 different Ti/O ratios grown at a total pressure of 2 Pa.
Spectra of optical transmittance (a), refractive index and extinction coefficient (b) of the insulating as-deposited films (dashed lines) and annealed films with electrical resistivity of 1.5 × 10−3 Ω cm (solid lines). The films were grown at a total pressure of p = 2 Pa and S = 0.91.
Electrical activation efficiencies of annealed films vs setpoint at different deposition pressures.
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