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Overcoming challenges to the formation of high-quality polycrystalline TiO2:Ta transparent conducting films by magnetron sputtering
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10.1063/1.4819088
/content/aip/journal/jap/114/8/10.1063/1.4819088
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/8/10.1063/1.4819088

Figures

Image of FIG. 1.
FIG. 1.

Growth rate of as-deposited films and absorption coefficient ( = 550 nm) of annealed films PEM setpoint values .  = 1 corresponds to pure Ar atmosphere; decreasing corresponds to increasing O flow/partial pressure. Achieving stable deposition for  = 0.93–1 is impossible because of technical limitations of the PEM system.

Image of FIG. 2.
FIG. 2.

Grazing incidence XRD patterns of the annealed films. The as-deposited films were grown at a total pressure of 2 (a) and 1 Pa (b). indicates PEM set point used for deposition. The inset shows the TEM diffraction pattern of the as-deposited film grown at a total pressure of 2 (a) and 1 Pa (b).

Image of FIG. 3.
FIG. 3.

Free electron density (a), mobility (b), and film resistivity (c) PEM setpoint.

Image of FIG. 4.
FIG. 4.

Temperature-dependent Hall effect measurements of films with 3 different Ti/O ratios grown at a total pressure of 2 Pa.

Image of FIG. 5.
FIG. 5.

Spectra of optical transmittance (a), refractive index and extinction coefficient (b) of the insulating as-deposited films (dashed lines) and annealed films with electrical resistivity of 1.5 × 10 Ω cm (solid lines). The films were grown at a total pressure of  = 2 Pa and  = 0.91.

Tables

Generic image for table
Table I.

Electrical activation efficiencies of annealed films setpoint at different deposition pressures.

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/content/aip/journal/jap/114/8/10.1063/1.4819088
2013-08-26
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Overcoming challenges to the formation of high-quality polycrystalline TiO2:Ta transparent conducting films by magnetron sputtering
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/8/10.1063/1.4819088
10.1063/1.4819088
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