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In order to search a gate dielectric with high permittivity on hydrogenated-diamond (H-diamond), LaAlO films with thin AlO buffer layers are fabricated on the H-diamond epilayers by sputtering-deposition (SD) and atomic layer deposition (ALD) techniques, respectively. Interfacial band configuration and electrical properties of the SD-LaAlO/ALD-AlO/H-diamond metal-oxide-semiconductor field effect transistors (MOSFETs) with gate lengths of 10, 20, and 30 m have been investigated. The valence and conduction band offsets of the SD-LaAlO/ALD-AlO structure are measured by X-ray photoelectron spectroscopy to be 1.1 ± 0.2 and 1.6 ± 0.2 eV, respectively. The valence band discontinuity between H-diamond and LaAlO is evaluated to be 4.0 ± 0.2 eV, showing that the MOS structure acts as the gate which controls a hole carrier density. The leakage current density of the SD-LaAlO/ALD-AlO/H-diamond MOS diode is smaller than 10 A cm at gate bias from −4 to 2 V. The capacitance-voltage curve in the depletion mode shows sharp dependence, small flat band voltage, and small hysteresis shift, which implies low positive and trapped charge densities. The MOSFETs show -type channel and complete normally off characteristics with threshold voltages changing from −3.6 ± 0.1 to −5.0 ± 0.1 V dependent on the gate length. The drain current maximum and the extrinsic transconductance of the MOSFET with gate length of 10 m are −7.5 mA mm and 2.3 ± 0.1 mS mm, respectively. The enhancement mode SD-LaAlO/ALD-AlO/H-diamond MOSFET is concluded to be suitable for the applications of high power and high frequency electrical devices.


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