Cross-sectional SEM images (on the left and on the right) and corresponding XRD patterns (center) for junctions grown at a substrate (fused quartz) temperature of (a) 250 °C; (b) 350 °C; (c) 500 °C; and (d) 700 °C. The thickness of the O2-rich layer is approximately 200 nm in all depositions.
Surface topography of n- and p-type films grown at 350 °C as probed by AFM.
XPS spectra of In 3d and O 1s, corresponding to p- and n-type layers, obtained for indium oxide homo-junctions after 30 min of ion etching. The depth profile for the same junction is shown in Fig. 4(b) .
(a) Total oxygen concentration, obtained from XPS spectra, as a function of depth for a thin-film IO junction. The vertical solid line depicts the expected boundary between n- and p-type layer. The horizontal solid (dashed) lines show the mean (±standard deviation) values; (b)–Variation of the OII/OI ratio with depth for n- and p-type films forming a junction. The inset shows the OII/OI ratio as a function of depth in another IO homo–junction.
I–V curves for indium oxide homo-junctions deposited on (a)-quartz and (b)-Si substrate at 350 °C.
C–V curves at two frequencies for a IO homo–junction grown on quartz substrate at 350 °C.
Inverse of the square of the depletion capacitance versus applied voltage for a IO homo–junction grown on quartz substrate at 350 °C.
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