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Temperature characteristics of spontaneous emission and optical gain in blue InGaN/GaN quantum well structures
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10.1063/1.4819226
/content/aip/journal/jap/114/8/10.1063/1.4819226
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/8/10.1063/1.4819226
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Transition wavelength as a function of the sheet carrier density and (b) optical matrix element of 2.5 nm InGaN/GaN QW structures for three different temperatures. The temperature is changed from 300 to 400 K.

Image of FIG. 2.
FIG. 2.

(a) Spontaneous emission spectra for several temperatures and (b) quasi-Fermi level separation as a function of the temperature for 2.5 nm InGaN/GaN QW structures. For comparison, we plotted results for the case without band-filling effect.

Image of FIG. 3.
FIG. 3.

Radiative recombination coefficient as a function of carrier density for several temperatures.

Image of FIG. 4.
FIG. 4.

(a) Internal efficiency and (b) current densities from non-radiative, radiative, and Auger recombinations at temperatures of 300 and 400 K as a function of the current density for 2.5 nm InGaN/GaN QW structures.

Image of FIG. 5.
FIG. 5.

Optical gain spectra with many-body effects for several temperatures of 2.5 nm InGaN/GaN QW structures. The self-consistent solutions are obtained at the sheet carrier density of .

Image of FIG. 6.
FIG. 6.

(a) Optical gain as a function of the radiative current density and (b)normalized threshold current, normalized with respect to its 300 K value, as a function of the temperature for 2.5 nm InGaN/GaN QW structures.

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/content/aip/journal/jap/114/8/10.1063/1.4819226
2013-08-26
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature characteristics of spontaneous emission and optical gain in blue InGaN/GaN quantum well structures
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/8/10.1063/1.4819226
10.1063/1.4819226
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