(a) Transition wavelength as a function of the sheet carrier density and (b) optical matrix element of 2.5 nm InGaN/GaN QW structures for three different temperatures. The temperature is changed from 300 to 400 K.
(a) Spontaneous emission spectra for several temperatures and (b) quasi-Fermi level separation as a function of the temperature for 2.5 nm InGaN/GaN QW structures. For comparison, we plotted results for the case without band-filling effect.
Radiative recombination coefficient Beff as a function of carrier density for several temperatures.
(a) Internal efficiency and (b) current densities from non-radiative, radiative, and Auger recombinations at temperatures of 300 and 400 K as a function of the current density for 2.5 nm InGaN/GaN QW structures.
Optical gain spectra with many-body effects for several temperatures of 2.5 nm InGaN/GaN QW structures. The self-consistent solutions are obtained at the sheet carrier density of .
(a) Optical gain as a function of the radiative current density and (b)normalized threshold current, normalized with respect to its 300 K value, as a function of the temperature for 2.5 nm InGaN/GaN QW structures.
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