1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Transitions of bandgap and built-in stress for sputtered HfZnO thin films after thermal treatments
Rent:
Rent this article for
USD
10.1063/1.4819232
/content/aip/journal/jap/114/8/10.1063/1.4819232
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/8/10.1063/1.4819232
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SEM images of films sputter-deposited from HfZnO targets. (a) x = 0, as-deposited, (b) x = 0, annealed at 600 °C, (c) x = 0.1, as-deposited, (d) x = 0.1, annealed at 600 °C.

Image of FIG. 2.
FIG. 2.

XRD patterns of films sputtered from (a) ZnO, (b) HfZnO, (c) HfZnO, (d) HfZnO, and (e) HfZnO targets.

Image of FIG. 3.
FIG. 3.

(a) C-axis lattice constants of films sputtered from HfZnO; (b) calculated built-in stresses. The numbers in the legends are the Hf content x of HfZnO.

Image of FIG. 4.
FIG. 4.

Transmittance spectra of HfZnO (a) as-deposited, (b) 200 °C, (c) 300 °C, (d) 400 °C, (e) 500 °C, and (f) 600 °C annealed samples. (g) Optical bandgap of HfZnO at various annealing temperatures.

Image of FIG. 5.
FIG. 5.

Resistivity of films sputtered from various Hf content targets at various annealing temperatures.

Loading

Article metrics loading...

/content/aip/journal/jap/114/8/10.1063/1.4819232
2013-08-26
2014-04-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transitions of bandgap and built-in stress for sputtered HfZnO thin films after thermal treatments
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/8/10.1063/1.4819232
10.1063/1.4819232
SEARCH_EXPAND_ITEM