SEM images of films sputter-deposited from HfxZn1−xO targets. (a) x = 0, as-deposited, (b) x = 0, annealed at 600 °C, (c) x = 0.1, as-deposited, (d) x = 0.1, annealed at 600 °C.
XRD patterns of films sputtered from (a) ZnO, (b) Hf0.025Zn0.975O, (c) Hf0.05Zn0.95O, (d) Hf0.075Zn0.925O, and (e) Hf0.1Zn0.9O targets.
(a) C-axis lattice constants of films sputtered from HfxZn1−xO; (b) calculated built-in stresses. The numbers in the legends are the Hf content x of HfxZn1−xO.
Transmittance spectra of HfxZn1−xO (a) as-deposited, (b) 200 °C, (c) 300 °C, (d) 400 °C, (e) 500 °C, and (f) 600 °C annealed samples. (g) Optical bandgap of HfxZn1−xO at various annealing temperatures.
Resistivity of films sputtered from various Hf content targets at various annealing temperatures.
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