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Capacitance-voltage characterization of interfaces between positive valence band offset dielectrics and wide bandgap semiconductors
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10.1063/1.4819402
/content/aip/journal/jap/114/8/10.1063/1.4819402
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/8/10.1063/1.4819402
/content/aip/journal/jap/114/8/10.1063/1.4819402
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/content/aip/journal/jap/114/8/10.1063/1.4819402
2013-08-30
2014-08-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Capacitance-voltage characterization of interfaces between positive valence band offset dielectrics and wide bandgap semiconductors
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/8/10.1063/1.4819402
10.1063/1.4819402
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