SRPES of Hg 4d, In 4d, and Te 4d core level at different etching time.
The element concentration for Hg, In, and Te under different etching time.
Schematic diagram of MIT surface under different etching times, (a) before etching, (b) 0∼10 min, (c)10∼40 min, (d) 40∼120 min.
Te 4d and In 4d core levels of the MIT surface for various Au coverage (a) Te 4d and (b) In 4d.
The intensities variation for Te, In, and Au peaks during the deposition process.
Experimental results and calculated curves of Te 4d IS /I0 ratio as a function of Au film deposition thickness, indicating a VW growth mode for Au at MIT surface.
SRPES of Au 4f core levels with different Au deposition thickness.
Te 4d core level photoemission spectra (dotted lines) with different Au coverage. The decomposed components of each peak are illustrated in the figure.
In 4d core level photoemission spectra (dotted lines) with different Au coverage. The decomposed peaks are shown similar like Te 4d spectra.
Au/In and Te/In ratios as a function of Au coverage.
The schematic figure of the Au/MIT interface formation process with different Au coverage. As in Fig. 3 , different atom species were marked by colors. (a) clean surface, (b) 0∼1.3 ML, (c) 1.3∼7.2 ML, (d) 7.2∼15 ML, (e) 15∼25 ML, and (f) the final interface.
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