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Wavelength tunable photoluminescence of ZnO1- x S x alloy thin films grown by reactive sputtering
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Top view. (b) Cross section SEM images of a ZnO S film ( = 11.9%).

Image of FIG. 2.
FIG. 2.

(a) XRD patterns of ZnO S films grown on glass substrates with different S content. (b) Grazing incidence X-ray diffraction pattern of ZnS film. Reflections can take place from planes inclined to the surface (inset). (c) XRD patterns of (0002) peak in ZnO S films with different S content in O-rich side. The S content increases from the left to the right: (1) 0%, (2) 2.1%, (3) 7.9%, (4) 9.7%, and (5) 11.9%. The curves have been normalized for clarity. (d) The lattice constant of ZnO S films as a function of S content. The square dot and solid line indicate the results of XRD and Vegard's law.

Image of FIG. 3.
FIG. 3.

Narrow-scan XPS spectra of (a) Zn 2p, (b) O 1s, and (c) S 2p in ZnO S film with a composition of  = 11.9%.

Image of FIG. 4.
FIG. 4.

Plots of () vs photo energy for ZnO S films with various S contents. Inset shows dependence of on S content deduced from the adsorption edge.

Image of FIG. 5.
FIG. 5.

Normalized PL spectra at band-edge region observed at room temperature.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Wavelength tunable photoluminescence of ZnO1-xSx alloy thin films grown by reactive sputtering