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Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)
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10.1063/1.4837975
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    Affiliations:
    1 Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Building, Mappin Street, Sheffield S1 3JD, United Kingdom
    2 Department of Physics, University of Warwick, Coventry CV4 7A, United Kingdom
    a) Present address: LAAS-CNRS, 7 avenue du Colonel Roche, 31077 Toulouse, France.
    b) Author to whom correspondence should be addressed. Electronic mail: t.walther@sheffield.ac.uk. Tel.: +44 114 222 5891. Fax: +44 114 222 5143.
    J. Appl. Phys. 115, 012003 (2014); http://dx.doi.org/10.1063/1.4837975
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/content/aip/journal/jap/115/1/10.1063/1.4837975
2014-01-02
2014-12-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)
http://aip.metastore.ingenta.com/content/aip/journal/jap/115/1/10.1063/1.4837975
10.1063/1.4837975
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