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Formation of carbon vacancy in 4H silicon carbide during high-temperature processing
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10.1063/1.4837996
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    Affiliations:
    1 Department of Physics/Center for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo, Norway
    2 Consiglio Nazionale delle Ricerche, Istituto di Microelettronica e Microsistemi, Sezione di Bologna (CNR-IMM of Bologna), via Gobetti 101, I-40129 Bologna, Italy
    3 Royal Institute of Technology, School of Information and Communication Technology (ICT), SE-164 40 Kista-Stcokholm, Sweden
    J. Appl. Phys. 115, 012005 (2014); http://dx.doi.org/10.1063/1.4837996
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/content/aip/journal/jap/115/1/10.1063/1.4837996
2014-01-02
2014-08-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation of carbon vacancy in 4H silicon carbide during high-temperature processing
http://aip.metastore.ingenta.com/content/aip/journal/jap/115/1/10.1063/1.4837996
10.1063/1.4837996
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