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Impact of capping layer type on emission of InAs quantum dots embedded in InGaAs/InxAlyGazAs/GaAs quantum wells
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10.1063/1.4858456
/content/aip/journal/jap/115/1/10.1063/1.4858456
http://aip.metastore.ingenta.com/content/aip/journal/jap/115/1/10.1063/1.4858456
/content/aip/journal/jap/115/1/10.1063/1.4858456
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/content/aip/journal/jap/115/1/10.1063/1.4858456
2014-01-06
2014-10-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of capping layer type on emission of InAs quantum dots embedded in InGaAs/InxAlyGazAs/GaAs quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/jap/115/1/10.1063/1.4858456
10.1063/1.4858456
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