1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design
Rent:
Rent this article for
USD
10.1063/1.4870599
/content/aip/journal/jap/115/13/10.1063/1.4870599
http://aip.metastore.ingenta.com/content/aip/journal/jap/115/13/10.1063/1.4870599
/content/aip/journal/jap/115/13/10.1063/1.4870599
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/jap/115/13/10.1063/1.4870599
2014-04-07
2014-10-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design
http://aip.metastore.ingenta.com/content/aip/journal/jap/115/13/10.1063/1.4870599
10.1063/1.4870599
SEARCH_EXPAND_ITEM