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An in-depth noise model for giant magnetoresistance current sensors for circuit design and complementary metal–oxide–semiconductor integration
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10.1063/1.4865771
/content/aip/journal/jap/115/17/10.1063/1.4865771
http://aip.metastore.ingenta.com/content/aip/journal/jap/115/17/10.1063/1.4865771
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Output voltage with offset correction for a GMR full Wheatstone bridge incorporating a series of 10 GMR elements in each branch (3 m × 170 m) biased with 1 mA and 1A. The sensitivity of the bridge is 0.624 mV/V/Oe, H = +1.07 Oe, and H = +0.99 Oe. Slight unbalanced resistance between branches (R = 40.099 kΩ, R = 25.024 kΩ, R = 24.737 kΩ, R = 24.396 kΩ) leads to a sensor output curve with some asymmetry (V = 3.31 mV for 1 A bias current). (b) Similar curves are shown for a full Wheatstone bridge based on MTJ devices (110 devices per branch, with 4 m × 70 m) biased with 1 mA and 100 A. The sensitivity is 12.5 mV/V/Oe, higher than the GMR bridge, H = +2.36 Oe. In this case, the bridge is symmetric (R = 3.787 kΩ, R = 3.753 kΩ, R = 3.817 kΩ, R = 3.817 kΩ, V = 9.7 V for 1 A bias current) although shows coercivity (H = +4 Oe).

Image of FIG. 2.
FIG. 2.

Noise measurement setup including a spectrum analyzer, a differential input LNA, a DUT, and the bias voltage source with two EMS. The RHB is formed by R and R and LHB by R and R

Image of FIG. 3.
FIG. 3.

(a) Spectral noise voltage for a full GMR bridge biased with 344 A (dashed-dotted) and 58 A (solid). The red line shows the total spectral noise voltage measured in differential (DIF) mode, the LHB spectral noise voltage is shown in cyan and the RHB in green. (b) Spectral noise for a full MTJ bridge biased with 2 mA (dashed-dotted) and 801 A (solid). The red line shows the total spectral noise measured in differential (DIF) mode, LHB spectral noise voltage in cyan and RHB in green. Modeled data are shown in symbols for the differential configuration.

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/content/aip/journal/jap/115/17/10.1063/1.4865771
2014-02-14
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: An in-depth noise model for giant magnetoresistance current sensors for circuit design and complementary metal–oxide–semiconductor integration
http://aip.metastore.ingenta.com/content/aip/journal/jap/115/17/10.1063/1.4865771
10.1063/1.4865771
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