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Heteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering
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10.1063/1.4862044
/content/aip/journal/jap/115/2/10.1063/1.4862044
http://aip.metastore.ingenta.com/content/aip/journal/jap/115/2/10.1063/1.4862044
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematics of the III-V on Si heterostructure with high aspect ratio STI trenches. The AFM analysis of the rounded-Ge and V-grooved starting surfaces is presented in the inset. (b) Time sequence of substrate temperature (T) and precursors flows (TBAs, TBP, TMIn) during SA-MOVPE of InP.

Image of FIG. 2.
FIG. 2.

(a) Cross-sectional TEM image in parallel view of InP (i) of W = 150 nm and (ii) of W = 50 nm trenches. (b) Tapping mode AFM images of InP nucleation layer showing (i) islands in high density in wide trenches and (ii) islands in low density in narrow trenches. (c) Schematic illustrations of growth mechanisms during InP SA-MOVPE for (i) wide trenches and (ii) for narrow trenches.

Image of FIG. 3.
FIG. 3.

InP/Ge/Si heterostructure grown in “rounded-Ge” 50-nm-width trenches with optimized nucleation conditions: (a) tilted view SEM, cross-sectional TEM image (b) in perpendicular view showing misfit dislocation network at the InP/Ge interface and (c) in parallel view showing a more uniform growth with the optimized nucleation layer.

Image of FIG. 4.
FIG. 4.

(a) X-ray diffraction ω-2θ scans along the Si (0 0 4) Bragg reflection and (b) X-ray rocking curve (ω-scans) along the InP (0 0 4) Bragg reflection of both InP/Ge/Si and InP/Si heterostructures in patterned Si wafer. Reciprocal lattice maps of the (2 2 4) reflections from InP of (c) InP/Ge/Si and (d) InP/Si heterostructures.

Image of FIG. 5.
FIG. 5.

InP/Si heterostructure grown in “V-grooved” 50-nm-width trenches with optimized nucleation conditions: (a) tilted view SEM, cross-sectional TEM images (b) in perpendicular view showing a twinned region at the InP/Si interface and (c) in parallel view showing a very uniform growth and low defect density InP layer with the Moiree fringes at the InP/Si bottom interface in inset.

Image of FIG. 6.
FIG. 6.

Room temperature SSRM patterns in W = 80 nm trenches of InP epitaxially grown on (a) rounded-Ge and (b) Si V-groove starting surface, respectively.

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/content/aip/journal/jap/115/2/10.1063/1.4862044
2014-01-14
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Heteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering
http://aip.metastore.ingenta.com/content/aip/journal/jap/115/2/10.1063/1.4862044
10.1063/1.4862044
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