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In this paper, we present a combined cathodoluminescence (CL) and electron beam induced current (EBIC) study of the optical and electrical properties of InGaN light emitting diodes grown using different active region growth methods. In one device, both the quantum wells and quantum barriers were deposited at their optimum temperatures (2 T), whereas in the other device, each barrier was grown in a two step process with the first few nanometers at a lower temperature (Q2T). It was found that in the Q2T sample, small micron scale domains of lower emission intensity correlate strongly to a lower EBIC signal, whereas in the 2 T sample which has a more uniform emission pattern and an anti-correlation exists between CL emission intensity and EBIC signal.


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