No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC
7. T. L. Biggerstaff, C. L. Reynolds, T. Zheleva, A. Lelis, D. Habersat, S. Haney, S. H. Ryu, A. Agarwal, and G. Duscher, Appl. Phys. Lett. 95, 032108 (2009).
12. R. K. Chanana, K. McDonald, M. Di Ventra, S. T. Pantelides, L. C. Feldman, G. Y. Chung, C. C. Tin, J. R. Williams, and R. A. Weller, Appl. Phys. Lett. 77, 2560 (2000).
17. N. T. Son, W. M. Chen, O. Kordina, A. O. Konstantinov, B. Monemar, E. Janzen, D. M. Hofman, D. Volm, M. Drechsler, and B. K. Meyer, Appl. Phys. Lett. 66, 1074 (1995).
18. E. H. Nicollian and J. R. Brews, MOS Physics and Technology ( Wiley, New York, 1982).
19. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd ed. ( Wiley, New York, 1981).
Article metrics loading...
The conduction mechanism of the leakage current of a thermally grown oxide on 4H silicon carbide (4H-SiC) was investigated. The dominant carriers of the leakage current were found to be electrons by the carrier-separation current-voltage method. The current-voltage and capacitance-voltage characteristics, which were measured over a wide temperature range, revealed that the leakage current in SiO2/4H-SiC on the Si-face can be explained as the sum of the Fowler-Nordheim
tunneling and Poole-Frenkel (PF) emission leakage currents. A rigorous FN analysis provided the true barrier height for the SiO2/4H-SiC interface. On the basis of Arrhenius plots of the PF current separated from the total leakage current, the existence of carbon-related defects and/or oxygen vacancy defects was suggested in thermally grown SiO2 films on the Si-face of 4H-SiC.
Full text loading...
Most read this month