No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Concentration, chemical bonding, and etching behavior of P and N at the SiO2
2. Z. Chen, Y. Xu, E. L. Garfunkel, L. C. Feldman, T. Buyuklimanli, W. Ou, J. Serfass, A. Wan, and S. Dhar, Appl. Surf. Sci. 317, 593 (2014).
3. Y. K. Sharma, A. C. Ahyi, T. Isaacs-Smith, A. Modic, M. Park, Y. Xu, E. L. Garfunkel, S. Dhar, L. C. Feldman, and J. R. Williams, IEEE Electron Device Lett. 34, 175 (2013).
9. G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, M. Di Ventra, S. T. Pantelides, L. C. Feldman, and R. A. Weller, Appl. Phys. Lett. 76, 1713 (2000).
10. G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, R. K. Chanana, R. A. Weller, S. T. Pantelides, L. C. Feldman, O. W. Holland, M. K. Das, and J. W. Palmour, IEEE Electron Device Lett. 22, 176 (2001).
11. G. Y. Chung, J. R. Williams, C. C. Tin, K. McDonald, D. Farmer, R. K. Chanana, S. T. Pantelides, O. W. Holland, and L. C. Feldman, Appl. Surf. Sci. 184, 399 (2001).
12. G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, M. D. Ventra, S. T. Pantelides, L. C. Feldman, and R. A. Weller, in Wide-Bandgap Electronic Devices ( Mater. Res. Soc. Symp. Proc., 2000), Vol. 622.
16. J. Rozen, S. Dhar, S. K. Dixit, V. V. Afanas'ev, F. O. Roberts, H. L. Dang, S. Wang, S. T. Pantelides, J. R. Williams, and L. C. Feldman, J. Appl. Phys. 103, 124513 (2008).
18. Y. Xu, X. Zhu, H. D. Lee, C. Xu, S. M. Shubeita, A. C. Ahyi, Y. Sharma, J. R. Williams, W. Lu, S. Ceesay, B. R. Tuttle, A. Wan, S. T. Pantelides, T. Gustafsson, E. L. Garfunkel, and L. C. Feldman, J. Appl. Phys. 115, 033502 (2014).
22. T. Shirasawa, K. Hayashi, H. Yoshida, S. Mizuno, S. Tanaka, T. Muro, Y. Tamenori, Y. Harada, T. Tokushima, Y. Horikawa, E. Kobayashi, T. Kinoshita, S. Shin, T. Takahashi, Y. Ando, K. Akagi, S. Tsuneyuki, and H. Tochihara, Phys. Rev. B 79, 241301(R) (2009).
26. X. Zhu, H. D. Lee, T. Feng, A. C. Ahyi, D. Mastrogiovanni, A. Wan, E. Garfunkel, J. R. Williams, T. Gustafsson, and L. C. Feldman, Appl. Phys. Lett. 97, 071908 (2010).
35. K. McDonald, R. A. Weller, S. T. Pantelides, L. C. Feldman, G. Y. Chung, C. C. Tin, and J. R. Williams, J. Appl. Phys. 93, 2719 (2003).
Article metrics loading...
Phosphorous and nitrogen are electrically active species at the SiO2/SiC interface in SiCMOSFETs. We compare the concentration, chemical bonding, and etching behavior of P and N at the SiO2/SiC(0001) interface using photoemission, ion scattering, and secondary ion mass spectrometry. Both interfacial P and N are found to be resistant to buffered HF solution etching at the SiO2/SiC(0001) interface while both are completely removed from the SiO2/Si interface. The medium energy ion scattering results of etched phosphosilicate glass/SiC not only provide an accurate coverage but also indicate that both the passivating nitrogen and phosphorus are confined to within 0.5 nm of the interface. Angle resolved photoemission shows that P and N are likely situated in different chemical environments at the interface. We conclude that N is primarily bound to Si atoms at the interface while P is primarily bound to O and possibly to Si or C. Different interface passivating element coverages and bonding configurations on different SiC crystal faces are also discussed. The study provides insights into the mechanisms by which P and N passivate the SiO2/SiC(0001) interface and hence improve the performance of SiCMOSFETs.
Full text loading...
Most read this month