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Solar cells utilizing multi-quantum well (MQW) structures are considered promising candidate materials for space applications. An open question is how well these structures can resist the impact of particle irradiation. The aim of this work is to provide feedback about the radiation response of InGaAs solar cells grown on Ge with MQWs incorporated within the i-region of the device. In particular, the local electronic transport properties of the MQW i-regions of solar cells subjected to electron and protonirradiation were evaluated experimentally using the electron beam induced current (EBIC) technique. The change in carrier collection distribution across the MQW i-region was analyzed using a 2D EBIC diffusionmodel in conjunction with numerical modeling of the electrical field distribution. Both experimental and simulated findings show carrier removal and type conversion from n- to p-type in MQW i-region at a displacement damage dose as low as ∼6.06–9.88 × 109 MeV/g. This leads to a redistribution of the electric field and significant degradation in charge carrier collection.


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