No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Radiation response of multi-quantum well solar cells: Electron-beam-induced current analysis
1. N. J. Ekins-Daukes, K. W. J. Barnham, J. P. Connolly, J. S. Roberts, J. C. Clark, G. Hill, and M. Mazzer, “ Strain-balanced GaAsP/InGaAs quantum well solar cells,” Appl. Phys. Lett. 75, 4195 (1999).
2. M. Sugiyama, Y. Wang, H. Fujii, H. Sodabanlu, K. Watanabe, and Y. Nakano, “ A quantum-well superlattice solar cell for enhanced current output and minimized drop in open-circuit voltage under sunlight concentration,” J. Phys. D: Appl. Phys. 46, 024001 (2012).
4. M. P. Lumb, A. L. Dobbin, D. B. Bushnell, K. H. Lee, T. N. D. Tibbits, A. W. Bett, R. D. McConnell, G. Sala, and F. Dimroth, “ Comparing the energy yield of (III–V) multi-junction cells with different numbers of sub-cells,” in 6th International Conference on Concentrating Photovoltaic Systems (CPV-6) (2010), Vol. 1277, p. 299.
6. R. J. Walters, G. P. Summers, S. R. Messenger, M. J. Romero, M. M. Al-Jassim, R. Garcia, D. Araujo, A. Freundlich, F. Newman, and M. F. Vilela, “ Electron beam induced current and cathodoluminescence study of proton irradiated InAsxP1-x/InP quantum-well solar cells,” J. Appl. Phys. 90, 2840 (2001).
7. R. Hoheisel, M. Gonzalez, M. P. Lumb, D. A. Scheiman, S. R. Messenger, C. G. Bailey, J. Lorentzen, T. N. D. Tibbits, M. Imaizumi, T. Ohshima, S. Sato, P. P. Jenkins, and R. J. Walters, “ Quantum-well solar cells for space: The impact of carrier removal on end-of-life device performance,” IEEE J. Photovoltaics 4, 253 (2014).
8. C. G. Bailey, R. Hoheisel, M. Gonzalez, D. V. Forbes, M. P. Lumb, S. M. Hubbard, D. A. Scheiman, L. C. Hirst, K. Schmieder, S. Messenger, B. Weaver, C. D. Cress, J. Warner, M. K. Yakes, P. P. Jenkins, and R. J. Walters, “ Radiation effects on InAlGaAs/InGaAs quantum well solar cells,” in IEEE 40th Photovoltaic Specialists Conference (2014), p. 2871.
9. S. I. Maximenko, M. P. Lumb, S. R. Messenger, R. Hoheisel, C. Affouda, D. Scheiman, M. Gonzalez, J. Lorentzen, P. P. Jenkins, and R. J. Walters, Proc. SPIE 8981, 89810U (2014).
10. S. I. Maximenko, J. A. Freitas, R. L. Myers-Ward, K.-K. Lew, B. L. VanMil, C. R. Eddy, D. K. Gaskill, P. G. Muzykov, and T. S. Sudarshan, “ Effect of threading screw and edge dislocations on transport properties of 4H–SiC homoepitaxial layers,” J. Appl. Phys. 108, 013708 (2010).
11. C. Claeys and E. Simeon, Radiation Effects in Advanced Semiconductor Materials and Devices ( Springer, New York, NY, USA, 2002).
13. M. Gonzalez, R. Hoheisel, M. P. Lumb, D. A. Scheiman, C. G. Bailey, J. Lorentzen, S. Maximenko, S. R. Messenger, P. P. Jenkins, T. N. D. Tibbits, M. Imaizumi, T. Ohshima, S. Sato, and R. J. Walters, “ Radiation study in quantum well III-V multi-junction solar cells,” in IEEE 39th Photovoltaic Specialists Conference (2013), p. 3233.
14. D. D. Drouin, A. R. A. Couture, D. D. Joly, X. X. Tastet, V. V. Aimez, and R. R. Gauvin, “ CASINO V2.42: A fast and easy-to-use modeling tool for scanning electron microscopy and microanalysis users,” Scanning 29, 92 (2007).
15. C. Donolato, “ On the theory of SEM charge-collection imaging of localized defects in semiconductors,” Optik 1, 19 (1978).
17. S. M. Davidson, R. M. Innes, and S. M. Lindsay, “ Injection and doping dependence of SEM and scanning light spot diffusion length measurements in silicon power rectifiers,” Solid-State Electron. 25, 261 (1982).
19. O. Marcelot, S. I. Maximenko, and P. Magnan, “ Plan view and cross-sectional view EBIC measurements: Effect of e-beam injection conditions on extracted minority carrier transport properties,” IEEE Trans. Electron Devices 61, 2437 (2014).
20. J.-M. Bonard and J.-D. Ganière, “ Quantitative analysis of electron-beam-induced current profiles across p–n junctions in GaAs/Al0.4Ga0.6As heterostructures,” J. Appl. Phys. 79, 6987 (1996).
21. S. I. Maximenko, S. R. Messenger, R. Hoheisel, D. Scheiman, M. Gonzalez, J. Lorentzen, P. Jenkins, and R. Walters, “ Characterization of high fluence irradiations on advanced triple-junction solar cells,” in IEEE 39th Photovoltaic Specialists Conference (2013), p. 2797.
22. J. H. Warner, C. Inguimbert, M. E. Twigg, S. R. Messenger, R. J. Walters, M. J. Romero, and G. P. Summers, “ Effect of proton and silicon ion irradiation on defect formation in GaAs,” IEEE Trans. Nucl. Sci. 55, 3016 (2008).
23. H. Y. Tada, J. R. Carter, B. E. Anspaugh, and R. G. Downing, The Solar Cell Radiation Handbook ( JPL Publication, 1982), p. 82.
24. K. L. Luke, “ Determination of diffusion length in samples of diffusion-length size or smaller and with arbitrary top and back surface recombination velocities,” J. Appl. Phys. 90, 3413 (2001).
25. S. I. Maximenko and R. J. Walters, “ Minority carrier diffusion length measurements in solar cells by electron beam induced current,” paper presented in IEEE 42 Photovoltaic Specialists Conference (2015).
28. M. P. Lumb, I. Vurgaftman, C. A. Affouda, J. R. Meyer, E. H. Aifer, and R. J. Walters, “ Quantum wells and superlattices for III-V photovoltaics and photodetectors,” Proc. SPIE 8471, 84710A (2012).
29. G. P. Summers, E. A. Burke, P. Shapiro, S. R. Messenger, and R. J. Walters, “ Damage correlations in semiconductors exposed to gamma, electron and proton radiations,” IEEE Trans. Nucl. Sci. 40, 1372 (1993).
32. V. A. Kozlov and V. V. Kozlovski, “ Doping of semiconductors using radiation defects produced by irradiation with protons and alpha particles,” Semiconductors 35, 735 (2001).
34. A. Khan, M. Yamaguchi, J. C. Bourgoin, and T. Takamoto, “ Thermal annealing study of 1 MeV electron-irradiation-induced defects in n(+)p InGaP diodes and solar cells,” J. Appl. Phys. 91, 2391 (2002).
35. D. Zuo, P. Qiao, D. Wasserman, and S. Lien Chuang, “ Direct observation of minority carrier lifetime improvement in InAs/GaSb type-II superlattice photodiodes via interfacial layer control,” Appl. Phys. Lett. 102, 141107 (2013).
36. M. Hastenrath and E. Kubalek, “ Time-resolved cathodoluminescence in scanning electron-microscopy,” Scanning Electron Microsc. 1, 157 (1982).
37. H. S. Nalwa, Handbook of Surfaces and Interfaces of Materials: Surface and Interface Phenomena ( Academic Press, 2001).
38. C. M. Parish and P. E. Russell, “ On the use of Monte Carlo modeling in the mathematical analysis of scanning electron microscopy-electron beam induced current data,” Appl. Phys. Lett. 89, 192108 (2006).
39. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, “ Band parameters for III–V compound semiconductors and their alloys,” J. Appl. Phys. 89, 5815 (2001).
Article metrics loading...
Solar cells utilizing multi-quantum well (MQW) structures are considered promising candidate materials for space applications. An open question is how well these structures can resist the impact of particle irradiation. The aim of this work is to provide feedback about the radiation response of In0.01Ga0.99As solar cells grown on Ge with MQWs incorporated within the i-region of the device. In particular, the local electronic transport properties of the MQW i-regions of solar cells subjected to electron and protonirradiation were evaluated experimentally using the electron beam induced current (EBIC) technique. The change in carrier collection distribution across the MQW i-region was analyzed using a 2D EBIC diffusionmodel in conjunction with numerical modeling of the electrical field distribution. Both experimental and simulated findings show carrier removal and type conversion from n- to p-type in MQW i-region at a displacement damage dose as low as ∼6.06–9.88 × 109 MeV/g. This leads to a redistribution of the electric field and significant degradation in charge carrier collection.
Full text loading...
Most read this month