No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Electrical and electroluminescent characterization of nanometric multilayers of SiOX
obtained by LPCVD including non-normal emission
S. Fathpour and B. Jalali, Silicon Photonics for Telecommunications and Biomedicine ( Taylor and Francis Group, 2012).
Z. Yu, M. Aceves-Mijares, A. Luna-López, E. Quiroga, and R. López-Estopier, in Photoluminescence and Single Electron Effect of Nanosized Silicon Materials, edited by B. M. Caruta, Focus on Nanomaterials Research ( E-nova Science Publishers, 2006).
E. Quiroga, W. Bensch, Z. Yu, M. Aceves, R. A. De Souza, M. Martin, V. Zaporojtchenko, and F. Faupel, “ Structural characteristics of a multilayer of silicon rich oxide (SRO) with high Si content prepared by LPCVD,” Phys. Status Solidi A 206, 263–269 (2009).
E. Quiroga-González, W. Bensch, M. Aceves-Mijares, Z. Yu, R. López-Estopier, and K. Monfil-Leyva, “ On the photoluminescence of multilayer arrays of silicon rich oxide with high silicon content prepared by low pressure chemical vapor deposition,” Thin Solid Films 519, 8030–8036 (2011).
Y. Berencén, J. M. Ramírez, O. Jambois, C. Domínguez, J. A. Rodríguez, and B. Garrido, “ Correlation between charge transport and electroluminescence properties of Si-rich oxide/nitride/oxide-based light emitting capacitors,” J. Appl. Phys. 112, 033114 (2012).
J. A. Luna-López, M. Aceves-Mijares, J. Carrillo-López, and A. Morales-Sánchez, “ Photoconduction in silicon rich oxide films obtained by low pressure chemical vapor deposition,” J. Vac. Sci. Technol. A 28, 170 (2010).
P. G. Pai, S. S. Chao, and Y. Takagi, “ Infrared spectroscopy study of SiOxfilms produced by plasma enhanced chemical vapor deposition,” J. Vac. Sci. Technol. A 4, 689 (1986).
J. Alarcón-Salazar, M. Aceves-Mijares, S. Román-López, and C. Falcony, “ Characterization and fabrication of SiOx nano-metric films, obtained by reactive sputtering,” in Proceedings of the 9th International Conference on Electrical Engineering, Computing Science and Automatic Control, 26–28 September (IEEE, 2012).
S. Román-López, M. Aceves-Mijares, J. Carrillo-López, and J. Pedraza-Chávez, “ Fabrication and characterization of nanometric SiOx/SiOy multilayer structure obtained by LPCVD,” AIP Conf. Proc. 1598, 47 (2014).
M. Aceves-Mijares, A. A. González-Fernández, R. López-Estopier, A. Luna-López, D. Berman-Mendoza, A. Morales, C. Falcony, C. Domínguez, and R. Murphy-Arteaga, “ On the origin of light emission in silicon rich oxide obtained by low-pressure chemical vapor deposition,” J. Nanomater. 2012, 890701.
J. Antonio Rodríguez, M. Antonio Vásquez-Agustín, A. Morales-Sánchez, and M. Aceves-Mijares, “ Emission mechanisms of Si nanocrystals and defects in SiO2 materials,” J. Nanomater. 2014, 409482.
V. Vinciguerra, G. Franzò, F. Priolo, F. Iacona, and C. Spinella, “ Quantum confinement and recombination dynamics in silicon nanocrystals embedded in Si/SiO2 superlattices,” J. Appl. Phys. 87, 8165 (2000).
D. N. Kouvatsos, V. Ioannou-Sougleridis, and A. G. Nassiopoulou, “ Charging effects in silicon nanocrystals within SiO2 layers, fabricated by chemical vapor deposition, oxidation, and annealing,” Appl. Phys. Lett. 82, 397 (2003).
I. Crupi, S. Lombardo, C. Spinella, C. Bongiorno, Y. Liao, C. Gerardi, B. Fazio, M. Vulpio, and S. Privitera, “ Electrical and structural characterization of metal-oxide-semiconductor capacitors with silicon rich oxide,” J. Appl. Phys. 89, 5552 (2001).
Y. Wang, “ Leakage current reduction of MOS capacitor induced by rapid thermal processing,” Master's thesis ( University of Kentuchy, 2010).
J. Yao, L. Zhong, D. Natelson, and J. M. Tour, “ In situ imaging of the conducting filament in a silicon oxide resistive switch,” Sci. Rep. 2, 242 (2012).
S.-W. Fu, H.-J. Chen, H.-T. Wu, and C.-F. Shih, “ Effect of SiO2 layers on electroluminescence from Si nanocrystal/SiO2 superlattices prepared using argon ion beam assisted sputtering,” Vacuum 126, 59–62 (2016).
L. Heikkil¨, T. Kuusela, H.-P. Hedman, and H. Ihantola, “ Electroluminescent SiO2/Si superlattices prepared by low pressure chemical vapour deposition,” Appl. Surf. Sci. 133, 84–88 (1998).
H.-Y. Tai, Y.-H. Lin, and G.-R. Lin, “ Wavelength-Shifted yellow electroluminescence of Si quantum-dot embedded 20-pair SiNx/SiOx superlattice by Ostwald ripening effect,” IEEE Photonics J. 5, 1 (2013).
Z. Yu, M. Aceves, and J. Carrillo, “ New experimental observations of single electron trapping properties of Si nanoclusters in SRO obtained by LPCVD,” Mater. Sci. Semicond. Process 7, 45–50 (2004).
M. Zacharias, J. Heitmann, R. Scholz, U. Kahler, M. Schmidt, and J. Blasing, “ Size-controlled highly luminescent silicon nanocrystals: A SiO/SiO2 superlattice approach,” Appl. Phys. Lett. 80, 661 (2002).
J. Juvert, A. A. González Fernández, A. Morales-Sánchez, J. Barreto, M. Aceves, A. Llobera, and C. Domínguez, “ DC electroluminescence efficiency of silicon rich oxide light emitting capacitor,” J. Lightwave Technol. 31(17), 2913–2918 (2013).
Article metrics loading...
This work describes the analysis and fabrication by Low Pressure Chemical Vapor Deposition of two light-emitting capacitors (LECs) constituted by nanometric multilayers of silicon-rich oxide. For both structures, seven layers were used: three light emitting layers with 6% silicon excess and four conductive layers with 12% silicon excess for one LEC and the other with 14% silicon excess. Both LECs were annealed at 1100 °C. Both multilayers demonstrate a substantially improved photoluminescent response compared to single emitting layers. A dielectric constant of 4.1 and a trap density of 1016 cm−3 were obtained from capacitance-voltage curves. Analysis of current-voltage and electroluminescence-voltage (EL-V) characteristics indicates that EL initiates under the space-charge-limited current mechanism, and the required voltage to turn on the emission is 38 V which is the trap-free limit voltage. However, EL increases exponentially under the impact ionization and trap-assisted tunneling conduction mechanisms. The electroluminescence spectra for both multilayers show two emission peaks centered in 450 and 700 nm attributed to oxygen defects. Also, the LEC non-normal emission was measured and it behaves like a Lambertian optical source. Both multilayers obtain the values of efficiency in the order of 10−6 which is in good agreement with the values reported in the literature.
Full text loading...
Most read this month