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Optical properties and band bending of InGaAs/GaAsBi/InGaAs type-II quantum well grown by gas source molecular beam epitaxy
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(PL) properties of In0.2Ga0.8As/GaAs0.96Bi0.04/In0.2Ga0.8As quantum well
(QW) grown on GaAs substrates by gas source molecular beam epitaxy were studied by varying excitation power and temperature, respectively. The type-II transition energy shifts from 1.149 eV to 1.192 eV when increasing the excitation power from 10 mW to 150 mW at 4.5 K, which was ascribed to the band-bending effect. On the other hand, the type-II PL quenches quickly along with fast redshift with the increasing temperature due to the relaxation of the band bending caused by the thermal excitation process. An 8 band k·p
model was used to analyze the electronic properties and the band-bending effect in the type-II QW. The calculated subband levels and transition energy fit well with the experiment results, and two thermal activation energies of 8.7 meV and 50 meV, respectively, are deduced.
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