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Optical anisotropy of InGaAs quantum wire arrays on vicinal (111)B
H. Yuan, X. Liu, F. Afshinmanesh, W. Li, G. Xu, J. Sun, B. Lian, A. Curto, G. Ye, Y. Hikita, Z. Shen, S. Zhang, X. Chen, M. Brongersma, H. Hwang, and Y. Cui, Nat. Nanotechnol. 10, 707 (2015).
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We studied the optical anisotropy of InGaAs quantum wire (QWR) arrays on vicinal (111)B
GaAs. Polarized photoluminescence
(PL) studies showed that the PL is polarized preferentially along [1–10], where the polarization degree ρ is about 9.4%. We also theoretically investigated the electronic states of the InGaAs QWR arrays to clarify how the optical anisotropy is affected by (1) the corrugated structure, (2) the strain effect including piezoelectricity, and (3) the thickness difference of the InGaAs layers on the two facets of the corrugated structure. While ρ for the corrugated structure is almost the same as that for a flat quantum well structure, the strain effects and the thickness difference result in the increases of ρ by about 1.9 and 2.5 times. The calculated results were compared to the experimental data. It was found that the effects of the strain and the thickness difference are important to explain the optical anisotropy of the InGaAs QWR arrays.
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