No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Electronic properties of Si-doped Alx
N with aluminum mole fractions above 80%
F. Mehnke, C. Kuhn, M. Guttmann, C. Reich, T. Kolbe, V. Kueller, A. Knauer, M. Lapeyrade, S. Einfeldt, J. Rass, T. Wernicke, M. Weyers, and M. Kneissl, Appl. Phys. Lett. 105, 051113 (2014).
F. Mehnke, T. Wernicke, H. Pingel, C. Kuhn, C. Reich, V. Kueller, A. Knauer, M. Lapeyrade, M. Weyers, and M. Kneissl, Appl. Phys. Lett. 103, 212109 (2013).
G. Kusch, F. Mehnke, J. Enslin, P. R. Edwards, T. Wernicke, M. Kneissl, and R. W. Martin, “ Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive X-ray spectroscopy,” (unpublished).
G. Kusch, M. Nouf-Allehiani, F. Mehnke, C. Kuhn, P. R. Edwards, T. Wernicke, A. Knauer, V. Kueller, G. Naresh-Kumar, M. Weyers, M. Kneissl, C. Trager-Cowan, and R. W. Martin, Appl. Phys. Lett. 107, 072103 (2015).
K. Seeger, Semiconductor Physics, 7th ed. ( Springer, 1999).
V. Bourgrov, M. E. Levinshtein, S. Rumyantsev, and A. Zubrilov, in Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe, edited by M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur ( John Wiley and Sons, Inc., 2001).
E. F. Schubert, Physical Foundations of Solid-State Devices, 2009th ed. ( Rensselaer Polytechnic Institute, Troy, New York, 2007).
B. E. Gaddy, Z. Bryan, I. Bryan, R. Kirste, J. Xie, R. Dalmau, B. Moody, Y. Kumagai, T. Nagashima, Y. Kubota, T. Kinoshita, A. Koukitu, Z. Sitar, R. Collazo, and D. L. Irving, Appl. Phys. Lett. 103, 161901 (2013).
B. Borisov, V. Kuryatkov, Y. Kudryavtsev, R. Asomoza, S. Nikishin, D. Y. Song, M. Holtz, and H. Temkin, Appl. Phys. Lett. 87, 132106 (2005).
J. Oila, J. Kivioja, V. Ranki, K. Saarinen, D. C. Look, R. J. Molnar, S. S. Park, S. K. Lee, and J. Y. Han, Appl. Phys. Lett. 82, 3433 (2003).
Article metrics loading...
The dependence of the activation energy as well as the energetic levels of the neutral charge state and the DX center of the Si donor in Al
N:Si samples on aluminum content and SiH4/III ratio were investigated by electron paramagnetic resonance
measurements, Van-der-Pauw resistivity
measurements, and Hall-effect measurements. It was found by EPR
measurements that the energy distance of the neutral charge state of the Si donor from the conduction band increases with increasing aluminum content from 61 meV for x = 0.82 to 106 meV for x = 0.89. Additionally, the formation of a DX center below the neutral charge state which is deepening from 6 meV for x = 0.82 to 58 meV for x = 0.89 is observed. This results in a linearly increasing activation energy with increasing aluminum content from 67 meV for x = 0.82 to 164 meV for x = 0.89. This is consistent with the activation energies as determined by Hall-effect measurements showing a linear increase from 24 meV for x = 0.85 to 211 meV for x = 0.96, as well as the activation energies as determined by Van-der-Pauw resistivity
measurements. By varying the SiH4/III ratio we observed a formation of a minimum resistivity in accordance with the room temperature charge carrier density. However, no clear dependence of the activation energy was observed. EPR
measurements of samples with a high SiH4/III ratio hint to an increased incorporation probability of a deep secondary donor species which might explain the increase in resistivity.
Full text loading...
Most read this month