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Impacts of annealing temperature on charge trapping performance in Zr0.5
for nonvolatile memory
Y. Yao, C. Li, Z. L. Huo, M. Liu, C. X. Zhu, C. Z. Gu, X. F. Duan, Y. G. Wang, L. Gu, and R. C. Yu, Nat. Commun. 4, 2764 (2013).
W. Lu, J. X. Lu, X. Ou, X. J. Liu, Y. Q. Cao, A. D. Li, B. Xu, Y. D. Xia, J. Yin, and Z. G. Liu, AIP Adv. 4, 087114 (2014).
S. Maikap, H. Y. Lee, T. Y. Wang, P. J. Tzeng, C. C. Wang, L. S. Lee, K. C. Liu, J. R. Yang, and M. J. Tsai, Semicond. Sci. Technol. 22, 884 (2007).
X. X. Lan, X. Ou, Y. Q. Cao, S. Y. Tang, C. J. Gong, B. Xu, Y. D. Xia, J. Yin, A. D. Li, F. Yan, and Z. G. Liu, J. Appl. Phys. 114, 044104 (2013).
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In this study, Zr0.5Hf0.5O2
films were fabricated on Si substrate and were annealed at different temperatures by rapid thermal annealing
(RTA) process. The charge trapping memory devices based on Zr0.5Hf0.5O2/SiO2/Si simple structure were investigated in detail. The memory device annealing at 690 °C shows the best property with a memory window of 5.6 V under ±12 V sweeping voltages in its capacitance-voltage curve and a better retention property. The high resolved transmission electron microscopy shows the generated SiO2 working as tunneling layer after RTA process, whose thickness increases with the rise of temperature. Combined with the TEM results, the photoluminescence spectrum and in situ angle resolved photoemission spectroscopy results further verify that oxygen vacancies and inter-diffusion layer also play a crucial role in charge trapping performance. This work provides direct insights for the charge trapping mechanisms based on high-k Zr0.5Hf0.5O2
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