No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Auger generation as an intrinsic limit to tunneling field-effect transistor performance
A. M. Walke, A. Vandooren, R. Rooyackers, D. Leonelli, A. Hikavyy, R. Loo, A. S. Verhulst, K.-H. Kao, C. Huyghebaert, G. Groeseneken, V. R. Rao, K. K. Bhuwalka, M. M. Heyns, N. Collaert, and A. V.-Y. Thean, IEEE Trans. Electron Devices 61, 707 (2014).
U. E. Avci, B. Chu-Kung, A. Agrawal, G. Dewey, V. Le, R. Rios, D. H. Morris, S. Hasan, R. Kotlyar, J. Kavalieros, and I. A. Young, IEEE Int. Electron Devices Meet. 2015, 34.5.1–34.5.4.
J. T. Teherani, W. Chern, S. Agarwal, J. L. Hoyt, and D. A. Antoniadis, in 2015 Fourth Berkeley Symposium on Energy Efficient Electronic Systems E3S (2015), pp. 1–3.
G. Dewey, B. Chu-Kung, J. Boardman, J. M. Fastenau, J. Kavalieros, R. Kotlyar, W. K. Liu, D. Lubyshev, M. Metz, N. Mukherjee, P. Oakey, R. Pillarisetty, M. Radosavljevic, H. W. Then, and R. Chau, IEEE Int. Electron Devices Meet. 2011, 33.6.1–33.6.4.
M. A. Kinch, Fundamentals of Infrared Detector Materials (SPIE Tutorial Text Vol. TT76) ( SPIE Publications, 2007).
B. K. Ridley, Quantum Processes in Semiconductors, 4th ed. ( Oxford University Press, New York, 2000).
S. Brand, M. G. Burt, C. Smith, and R. A. Abram, in Proceedings of the 17th International Conference Phys. Semiconductors, edited by J. D. Chadi and W. A. Harrison ( Springer, New York, 1985), pp. 1013–1016.
A. S. Verhulst, D. Verreck, M. A. Pourghaderi, M. V. de Put, B. Sorée, G. Groeseneken, N. Collaert, and A. V.-Y. Thean, Appl. Phys. Lett. 105, 43103 (2014).
E. W. Ng and M. Geller, J. Res. Natl. Bur. Stand. 73B, 1 (1968).
E. I. Blount, in Solid State Physics, edited by F. S. Turnbull and D. Turnbull ( Academic Press, 1962), pp. 305–373.
Article metrics loading...
Many in the microelectronics field view tunneling field-effect transistors (TFETs) as society's best hope for achieving a >10× power reduction for electronic devices; however, despite a decade of considerable worldwide research, experimental TFET results have significantly underperformed simulations and conventional MOSFETs. To explain the discrepancy between TFET experiments and simulations, we investigate the parasitic leakage current due to Auger generation, an intrinsic mechanism that cannot be mitigated with improved material quality or better device processing. We expose the intrinsic link between the Auger and band-to-band tunneling rates, highlighting the difficulty of increasing one without the other. From this link, we show that Auger generation imposes a fundamental limit on ultimate TFET performance.
Full text loading...
Most read this month