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Manipulation of magnetism in perpendicularly magnetized Heusler alloy Co2
by electric-field at room temperature
S. Ikeda, K. Miura, H. Yamamoto, K. Mizunuma, H. D. Gan, M. Endo, S. Kanai, J. Hayakawa, F. Matsukura, and H. Ohno, Nat. Mater. 9, 721 (2010).
T. Maruyama, Y. Shiota, T. Nozaki, K. Ohta, N. Toda, M. Mizuguchi, A. A. Tulapurkar, T. Shinjo, M. Shiraishi, S. Mizukami, Y. Ando, and Y. Suzuki, Nat. Nanotechnol. 4, 158 (2009).
F. Bonell, Y. T. Takahashi, D. D. Lam, S. Yoshida, Y. Shiota, S. Miwa, T. Nakamura, and Y. Suzuki, Appl. Phys. Lett. 102, 152401 (2013).
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The electrical manipulation of magnetic properties in perpendicularly magnetized Co2FeAl0.5Si0.5 ultra-thin films has been investigated. An electric-field is applied by utilizing either a solid-state dielectric HfO2
film or an ionic gel
film as the gate insulator in the form of a field effect parallel capacitor. Obvious changes of the coercive field and Curie temperature (∼24 K) by gating voltage are observed for a 0.8 nm thick film, while a clear change of the magnetic anisotropy is obtained for the 1.1 nm thick one. The experimental results have been attributed to both the electric-field-induced modulation of carrier density near the interface and the oxidation-reduction effect inside the magnetic films.
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