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Influence of Transverse Modes on Photoconductive Decay in Filaments
1.W. Shockley, Electrons and Holes in Semiconductors (D. Van Nostrand Company, Inc., Princeton, New Jersey, 1950).
2.D. T. Stevenson and R. J. Keyes, J. Appl. Phys. 26, 190 (1955).
3.J. S. Blakemore and K. C. Nomura, Bull. Am. Phys. Soc. Ser. II, 4, 179 (1959).
4.J. P. McKelvey, IRE Trans. on Electron Devices ED‐5, 260 (1958).
5.A. C. Sim, J. Electronics and Control 5, 251 (1958).
6.P. M. Morse and H. Feshbach, Methods of Theoretical Physics (McGraw‐Hill Book Company, Inc., New York, 1953).
7.Obviously, if the space and time coordinates are related (as they are in the case of a flying spot scanner), then must be treated as a triple integral.
8.As previously recommended for measurements on silicon, J. S. Blakemore, Phys. Rev. 110, 1301 (1958).
9.This fraction can of course equally well be written as it diminishes at a rate set by both surface and bulk recombination.
10.Not that we would recommend attempting to deduce from a measurement of () in a filament, where is smaller than unity. High order modes may not cause error if the measurement is sufficiently delayed, but any uncertainty in dimensions or diffusion constant would jeopardize the possibility of expressing itself with the required accuracy.
11.B. K. Ridley, J. Electronics and Control 5, 549 (1958).
12.H. B. DeVore, Phys. Rev. 102, 86 (1956).
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