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Some Electrical Properties of the Porous Graphite Contact on p‐Type Silicon
1.G. G. Harman and T. Higier, J. Appl. Phys. 33, 2198 (1962), preceding paper.
2.All samples described in this letter were etched in for one minute. One sample was etched in CP4 and appeared to have a lower breakdown than the others, but this etching effect was not investigated further.
3.W. A. Yager and S. O. Morgan, J. Phys. Chem. 35, 2026 (1931).
4.H. Statz and G. A. deMars, Proceedings of the International Conference on Solid State Physics in Electronics and Telecommunications (Proceedings of the Brussels Conference), edited by M. Désirant and J. Michiels (Academic Press Inc., New York, 1960), Vol. 1, p. 587.
5.H. Statz, G. de Mars, L. Davis, Jr., and A. Adams, Jr., Phys. Rev. 106, 455 (1957).
6.Dag dispersion ♯226 was used in all of the experiments reported here. It is obtainable from Acheson Colloids, Port Huron, Michigan; other commerical graphite dispersions were tested and all gave the same general characteristics but resulted in either erratic, noisy behavior, lowered breakdown voltages, or poor adhesion. However, a reasonably satisfactory electrode can be made by simply combining distilled water 5–10% silicates (water glass) and finely powdered graphite into a paste consistency. Good contact is made to the “Dag” by pressing a wire against it.
7.O. L. Meyer (to be published).
8.E. O. Johnson, RCA Rev. 18, 525 (1957).
9.See Fig. 17 in reference 8. Note that all charge and potential signs need to be reversed in Johnson’s treatment of an n‐type semiconductor in order to fit the present p‐type situation.
10.E. Spenke, Electronic Semiconductors (McGraw‐Hill Book Company, Inc., New York, 1958), Chap. 4.
11.K. Lehovec, J. Minahan, A. Sloboskoy, and J. Sprague, Twenty‐First Annual Conference on Physical Electronics, Cambridge, Massachusetts, (March 1961).
11.Also see L. M. Terman, Technical Report No. 1655‐1 (February 1961), Stanford Electronics Laboratories, Stanford, California, ASTIA No. AD‐253926.
12.E. C. Wurst, Jr. and E. H. Borneman, J. Appl. Phys. 28, 235 (1957).
13.J. Bardeen, Phys. Rev. 71, 717 (1947).
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