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Injection‐Stimulated Vacancy Reordering in p‐Type Silicon at 76°K
1.G. D. Watkins, J. Phys. Soc. (Japan) 18, Suppl. II, 25 (1963).
2.G. D. Watkins, General Electric Research Report No. 64‐RL‐3655E, 3–4 (1964), General Electric Research Laboratories, Schenectady, New York.
3.W. Rosenzweig, H. K. Gummel, and F. M. Smits, Bell System Tech. J. 42, 404 (1963).
4.If the vacancy behaved as a normal recombination center, such as Au in silicon, the ratio should be approximately at 76 °K [M. Lax, Phys. Rev. 119, 1502 (1960)]. However, the disordered crystalline region surrounding the vacancy should considerably modify the Lax model, reducing the effect of Coulomb attraction in the hole‐ and electron‐capture processes for the vacancy. Due to the lack of quantitative knowledge regarding this modification, the only reasonable assumption for is that it be unity.
5.H. J. Stein, J. Appl. Phys. Letters 2, 235 (1963).
6.Similar irradiations of n‐type silicon yield a damage rate at 76 °K not greatly different than for p type (in the absence of injected minority carriers). Injection during irradiation in n type does not appreciably alter its damage rate at 76 °K; however, it does greatly reduce the fraction of damage which recovers between 76 ° and 300 °K from that seen in the noninjection case.
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