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Behavior of the p‐n Depletion Layer following Injection of Intense Density of Carriers
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8.Solid State Radiations model 100 NPS‐200‐300 dectector. This device is constructed of n‐type silicon, possesses a front‐surface dead layer of and is depleted to a depth of 90 μ. when biased to
9.These values determined by capacitance‐per‐unit‐area measurements.
10.The author is indebted to J. D. Plimpton for pointing out that “trapping and releasing” times in these devices often are a factor of five slower than the theoretical values of hole‐collection times. Hence, the actual carrier densities are, if anything, even higher than obtained from this equation.
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