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Evidence for Damage Regions in Si, GaAs, and InSb Semiconductors Bombarded with High‐Energy Neutrons
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10.1063/1.1709962
/content/aip/journal/jap/38/6/10.1063/1.1709962
http://aip.metastore.ingenta.com/content/aip/journal/jap/38/6/10.1063/1.1709962
/content/aip/journal/jap/38/6/10.1063/1.1709962
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/content/aip/journal/jap/38/6/10.1063/1.1709962
2004-06-29
2014-08-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Evidence for Damage Regions in Si, GaAs, and InSb Semiconductors Bombarded with High‐Energy Neutrons
http://aip.metastore.ingenta.com/content/aip/journal/jap/38/6/10.1063/1.1709962
10.1063/1.1709962
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