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Formation of Amorphous Silicon by Ion Bombardment as a Function of Ion, Temperature, and Dose
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10.1063/1.1661223
/content/aip/journal/jap/43/3/10.1063/1.1661223
http://aip.metastore.ingenta.com/content/aip/journal/jap/43/3/10.1063/1.1661223
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/content/aip/journal/jap/43/3/10.1063/1.1661223
2003-11-10
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation of Amorphous Silicon by Ion Bombardment as a Function of Ion, Temperature, and Dose
http://aip.metastore.ingenta.com/content/aip/journal/jap/43/3/10.1063/1.1661223
10.1063/1.1661223
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