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Photoelectron surface escape probability of (Ga,In)As : Cs–O in the 0.9 to [inverted lazy s] 1.6 μm range
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10.1063/1.1661817
/content/aip/journal/jap/43/9/10.1063/1.1661817
http://aip.metastore.ingenta.com/content/aip/journal/jap/43/9/10.1063/1.1661817
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/content/aip/journal/jap/43/9/10.1063/1.1661817
2003-11-10
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoelectron surface escape probability of (Ga,In)As : Cs–O in the 0.9 to [inverted lazy s] 1.6 μm range
http://aip.metastore.ingenta.com/content/aip/journal/jap/43/9/10.1063/1.1661817
10.1063/1.1661817
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