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Photo‐induced currents in Ag‐Al2O3‐Al structures: Detection characteristics at 325 nm
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15.The term “tunneling” is used here in a general sense to designate the transport of electrons (or holes) through the barrier region. Strictly, this transport process may not be due to tunneling, as is the case for electrons excited to energies E larger than the barrier height φ, in which case the commonly used term “internal photoemission” is perhaps more appropriate. However, since the rigorous quantitative expressions for the transmission coefficient through the barrier are identical for the (internal photoemission) and (tunneling) cases, we will use the more general term of “photon‐assisted tunneling”. This nomenclature implicitly covers the small fraction of the photoinduced current that occurs, especially for thin barriers, due to actual tunneling. It also carries over directly to the case of photon energies less than the barrier height (for instance, see Ref. 11).
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17.For instance, see Refs. 8 and 11.
18.A dielectric constant of 4 was assumed for (as in Ref. 11). Strictly the concept of dielectric constant is inadequate for the small dimensions of that are implied. However, this order‐of‐magnitude estimate is in good agreement with that based on the zero‐bias tunneling resistance (see Ref. 6).
19.Due to the smallness of the signals induced by the visible lines, the polarities of these signals were deduced from their observed bias dependence, which was the reverse of the 325. 0‐nm signal.
20.Similar results were observed for other thicknesses, and when the insulator was changed from to electron‐beam evaporated films of MgO.
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28.The plots are in arbitrary units, with the current density assumed to be proportional to the experimentally measured photovoltages. Typical zero‐bias junction impedances were of the order of 1 kΩ. This value was used for the calculation of Fig. 3.
29.The increased net absorption in Ag occurs in spite of a reduction of the absolute absorption coefficient; this is a consequence of multiple reflection and absorption in the thin‐film multilayered structure.
30.The observed enhancement of 325‐nm signals for p‐polarizations at oblique incidence is believed to be due to the excitation of the plasma resonance of Ag, as seen by a high‐resolution scan around this wavelength: R. K. Jain, M. G. Farrier, and T. K. Gustafson, Phys. Rev. Lett. 36, 435 (1976).
31. where is the applied bias voltage.
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