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Single‐crystal‐aluminum Schottky‐barrier diodes prepared by molecular‐beam epitaxy (MBE) on GaAs
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10.1063/1.325286
/content/aip/journal/jap/49/6/10.1063/1.325286
http://aip.metastore.ingenta.com/content/aip/journal/jap/49/6/10.1063/1.325286
/content/aip/journal/jap/49/6/10.1063/1.325286
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/content/aip/journal/jap/49/6/10.1063/1.325286
2008-08-12
2015-07-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Single‐crystal‐aluminum Schottky‐barrier diodes prepared by molecular‐beam epitaxy (MBE) on GaAs
http://aip.metastore.ingenta.com/content/aip/journal/jap/49/6/10.1063/1.325286
10.1063/1.325286
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