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Diffusion coefficient of holes in Ge
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6.Preliminary results which show that data of Ref. 1 are physically unplausible have been reported in C. Canali, G. Gavioli, F. Nava, G. Ottaviani, and L. Reggiani, in Proceedings of the 13th International Conference on the Physics of Semiconductors, edited by F. G. Fumi (Marves, Rome, 1976), p. 1231.
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14.The use of the classical diffusion equation as well as the possibility of obtaining the diffusion constant by means of Monte Carlo calculations have been recently questioned by Nag, Phys. Rev. B 11, 3031 (1975).
14.B. R. Nag, [Appl. Phys. Lett. 28, 550 (1976) suggested that the agreement between Monte Carlo calculations and the diffusion coefficient obtained with the time‐of‐flight techniques.
14.C. Canali, C. Jacoboni, G. Ottaviani, and A. Alberigi Quaranta, Appl. Phys. Lett. 27, 278 (1975)] could be improved by taking into account an additional time‐derivative term in the usual definitionof the diffusion coefficient.
14.C. Jacoboni, G. Gagliani, L. Reggiani, and O. Turci, Solid‐State Electron. 21, 315 (1978), have shown that if a drift contribution to the diffusion constant exists, it influences the time‐of‐flight measurements and is automatically taken into account in the Monte Carlo simulation.
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18.Some authors [Refs. 2 and 5 and K. K. Thornber, Bell Syst. Tech. J. 53, 1041 (1974).] replace μ with the differential mobility This point has been discussed in
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20.A recent result confirming this possibility has been reported in Ref. 14.
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