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The formation of vanadium silicides at thin‐film interfaces
1.See for example, J. M. Mayer and K. N. Tu, J. Vac. Sci. Technol. 11, 86 (1974).
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6.Manufactured by Robert Huber Diffraktionstecnik, W. Germany.
7.K. N. Tu and B. S. Berry, J. Appl. Phys. 43, 3283 (1972).
8.A. R. Storm (unpublished).
9.The thermometer and linearizing circuit were purchased from Lake Shore Cryotronics, Inc.
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11.B‐doped Si was used because it has been determined that these samples do not chip or peel after subsequent annealing. samples prepared without B are subject to these problems.
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13.In one case (Sample V‐Si15) the initial phase grew to the depletion of the Si. In this case V‐rich phases were observed at the ‐V interface. This indicates that, as expected, is not stable at 720 °C in the presence ofexcess V.
14.W. K. Chu, H. Krautle, J. W. Mayer, H. Muller, M.‐A. Nicolet, and K. N. Tu, Appl. Phys. Lett. 25, 454 (1974).
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