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Doping characteristics and electrical properties of Be‐doped p‐type Al x Ga1−x As by liquid phase epitaxy
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10.1063/1.327499
/content/aip/journal/jap/51/10/10.1063/1.327499
http://aip.metastore.ingenta.com/content/aip/journal/jap/51/10/10.1063/1.327499
/content/aip/journal/jap/51/10/10.1063/1.327499
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/content/aip/journal/jap/51/10/10.1063/1.327499
2008-07-24
2014-08-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Doping characteristics and electrical properties of Be‐doped p‐type AlxGa1−xAs by liquid phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/jap/51/10/10.1063/1.327499
10.1063/1.327499
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