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The behavior of dislocations in GaAs substrates during the growth of Ga x Al1−x As epitaxial layers
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10.1063/1.329263
/content/aip/journal/jap/52/6/10.1063/1.329263
http://aip.metastore.ingenta.com/content/aip/journal/jap/52/6/10.1063/1.329263
/content/aip/journal/jap/52/6/10.1063/1.329263
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/content/aip/journal/jap/52/6/10.1063/1.329263
1981-06-01
2014-12-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The behavior of dislocations in GaAs substrates during the growth of GaxAl1−xAs epitaxial layers
http://aip.metastore.ingenta.com/content/aip/journal/jap/52/6/10.1063/1.329263
10.1063/1.329263
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