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Intrinsic density n i (T) in GaAs: Deduced from band gap and effective mass parameters and derived independently from Cr acceptor capture and emission coefficients
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10.1063/1.329958
/content/aip/journal/jap/53/1/10.1063/1.329958
http://aip.metastore.ingenta.com/content/aip/journal/jap/53/1/10.1063/1.329958
/content/aip/journal/jap/53/1/10.1063/1.329958
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/content/aip/journal/jap/53/1/10.1063/1.329958
1982-01-01
2015-01-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Intrinsic density ni (T) in GaAs: Deduced from band gap and effective mass parameters and derived independently from Cr acceptor capture and emission coefficients
http://aip.metastore.ingenta.com/content/aip/journal/jap/53/1/10.1063/1.329958
10.1063/1.329958
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