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A kinetic study of the plasma‐etching process. I. A model for the etching of Si and SiO2 in C n F m /H2 and C n F m /O2 plasmas
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10.1063/1.331074
/content/aip/journal/jap/53/4/10.1063/1.331074
http://aip.metastore.ingenta.com/content/aip/journal/jap/53/4/10.1063/1.331074
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/content/aip/journal/jap/53/4/10.1063/1.331074
1982-04-01
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A kinetic study of the plasma‐etching process. I. A model for the etching of Si and SiO2 in CnFm/H2 and CnFm/O2 plasmas
http://aip.metastore.ingenta.com/content/aip/journal/jap/53/4/10.1063/1.331074
10.1063/1.331074
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