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Molecular beam epitaxial growth of InGaAlP visible laser diodes operating at 0.66–0.68 μm at room temperatures
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10.1063/1.332012
/content/aip/journal/jap/54/12/10.1063/1.332012
http://aip.metastore.ingenta.com/content/aip/journal/jap/54/12/10.1063/1.332012
/content/aip/journal/jap/54/12/10.1063/1.332012
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/content/aip/journal/jap/54/12/10.1063/1.332012
1983-12-01
2014-08-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Molecular beam epitaxial growth of InGaAlP visible laser diodes operating at 0.66–0.68 μm at room temperatures
http://aip.metastore.ingenta.com/content/aip/journal/jap/54/12/10.1063/1.332012
10.1063/1.332012
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