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Interface trap generation in silicon dioxide when electrons are captured by trapped holes
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10.1063/1.332323
/content/aip/journal/jap/54/5/10.1063/1.332323
http://aip.metastore.ingenta.com/content/aip/journal/jap/54/5/10.1063/1.332323
/content/aip/journal/jap/54/5/10.1063/1.332323
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/content/aip/journal/jap/54/5/10.1063/1.332323
1983-05-01
2014-12-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interface trap generation in silicon dioxide when electrons are captured by trapped holes
http://aip.metastore.ingenta.com/content/aip/journal/jap/54/5/10.1063/1.332323
10.1063/1.332323
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