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Substitutional placement of phosphorus in ion implanted silicon by recrystallizing amorphous/crystalline interface
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10.1063/1.332412
/content/aip/journal/jap/54/6/10.1063/1.332412
http://aip.metastore.ingenta.com/content/aip/journal/jap/54/6/10.1063/1.332412
/content/aip/journal/jap/54/6/10.1063/1.332412
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/content/aip/journal/jap/54/6/10.1063/1.332412
1983-06-01
2014-12-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Substitutional placement of phosphorus in ion implanted silicon by recrystallizing amorphous/crystalline interface
http://aip.metastore.ingenta.com/content/aip/journal/jap/54/6/10.1063/1.332412
10.1063/1.332412
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