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On the nonequilibrium statistics and small signal admittance of Si‐SiO2 interface traps in the deep‐depleted gated‐diode structure
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10.1063/1.332919
/content/aip/journal/jap/55/10/10.1063/1.332919
http://aip.metastore.ingenta.com/content/aip/journal/jap/55/10/10.1063/1.332919
/content/aip/journal/jap/55/10/10.1063/1.332919
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/content/aip/journal/jap/55/10/10.1063/1.332919
1984-05-15
2014-12-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: On the nonequilibrium statistics and small signal admittance of Si‐SiO2 interface traps in the deep‐depleted gated‐diode structure
http://aip.metastore.ingenta.com/content/aip/journal/jap/55/10/10.1063/1.332919
10.1063/1.332919
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