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Temperature dependence of boron infrared‐absorption line intensity in extrinsic silicon
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10.1063/1.333769
/content/aip/journal/jap/56/10/10.1063/1.333769
http://aip.metastore.ingenta.com/content/aip/journal/jap/56/10/10.1063/1.333769
/content/aip/journal/jap/56/10/10.1063/1.333769
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/content/aip/journal/jap/56/10/10.1063/1.333769
1984-11-15
2014-12-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature dependence of boron infrared‐absorption line intensity in extrinsic silicon
http://aip.metastore.ingenta.com/content/aip/journal/jap/56/10/10.1063/1.333769
10.1063/1.333769
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