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A deep level transient spectroscopy analysis of electron and hole traps in bulk‐grown GaAs
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10.1063/1.336854
/content/aip/journal/jap/59/1/10.1063/1.336854
http://aip.metastore.ingenta.com/content/aip/journal/jap/59/1/10.1063/1.336854
/content/aip/journal/jap/59/1/10.1063/1.336854
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/content/aip/journal/jap/59/1/10.1063/1.336854
1986-01-01
2014-07-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A deep level transient spectroscopy analysis of electron and hole traps in bulk‐grown GaAs
http://aip.metastore.ingenta.com/content/aip/journal/jap/59/1/10.1063/1.336854
10.1063/1.336854
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