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Growth condition dependence of EL2 concentrations in magnetic field applied liquid‐encapsulated Czochralski GaAs crystals
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7.Recently, A. Yahata, T. Sato, T. Kikuta, and K. Ishida have shown the presence of three different midgap levels labeled EOl, EO2, and EO3 in LEC n‐GaAs. 8The midgap level EL2 in the present work is the one designated as EOl in Ref. 8 which usually dominates in Au/n‐GaAs.
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