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Influence of process parameters on the electrical properties of plasma‐sprayed silicon
1.See, for example, J. Dietl, D. Helmreich, and E. Sirtl, in Crystal Growth and Applications, Vol. 5 (Springer, Berlin, 1981), p. 43;
1.M. Rodot, in Advances in Solar Energy (American Solar Energy Society, New York, 1983), p. 138;
1.T. Ciszek, in Proceedings of the 16th IEEE Photovoltaic Specialists Conference, 1982 (IEEE, New York, 1982), p. 316.
2.K. Arain, N. Tsuya, and T. Takeuchi, in Proceedings of the 14th IEEE Photovoltaic Specialist Conference, 1980 (IEEE, New York, 1982);
2.C. F. A. van Os, J. L. P. W. Verpalen, and J. Bezelmer, Sol. Energy Mater. 10, 209 (1984).
3.Y. Maeda, T. Yokoyama, and I. Hide, in Proceedings of the 16th IEEE Photovoltaic Specialist Conference, 1982 (IEEE, New York, 1982), p. 133.
4.R. J. Janowiecki, M. C. Willson, and D. H. Harris, US Patent 4, 003, 770, Jan. 1977.
5.M. S. Alaee and T. Hashem, in Proceedings of the 3rd European Conference on Photovoltaic and Solar Energy, Cannes, 1980 (Reidel, Dordecht, 1980), p. 584.
6.R. Suryanarayanan and G. Zribi, J. Phys. (Paris) Colloq. C1–43, 375 (1982);
6.R. Suryanarayanan, G. Brun, and M. Akani, Thin Solid Films 119, 67 (1984).
7.See, for example, J. H. Zaat, Annu. Rev. Mater. Sci. 13, 9 (1983);
7.D. Apelian, M. Paliwal, R. W. Smith, and W. F. Schilling, Int. Metal. Rev. 28, 271 (1983);
7.M. A. Vardelle, A. Vardelle, J. L. Besson, and P. Fauchais, Rev. Phys. Appl. 16, 425 (1981) and references cited therein.
8.M. Akani, R. Suryanarayanan, and G. Brun, International Thermal Spraying Conference, Montreal, Sept. 1986 (Pergamon, Ontario, 1986) (to be published).
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