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Disordering of AlAs‐GaAs superlattices by Si and S implantation at different implant temperatures
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10.1063/1.337497
/content/aip/journal/jap/60/12/10.1063/1.337497
http://aip.metastore.ingenta.com/content/aip/journal/jap/60/12/10.1063/1.337497
/content/aip/journal/jap/60/12/10.1063/1.337497
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/content/aip/journal/jap/60/12/10.1063/1.337497
1986-12-15
2014-09-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Disordering of AlAs‐GaAs superlattices by Si and S implantation at different implant temperatures
http://aip.metastore.ingenta.com/content/aip/journal/jap/60/12/10.1063/1.337497
10.1063/1.337497
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